Time resolution

<15ns

Highest spatial resolution

100μm (for whole wafer detection)

Lifetime imaging speed

approximately 15 minutes per wafer

Detection wavelengths

1064/532/355/266nm(switchable)

Detection sizes

available for 4-inch/6-inch/8-inch wafers

Detection functions

capable of surface and bulk lifetime imaging detection

Optical bright field imaging can be combined for visual inspection of samples

Fluorescence detection can be combined for defect detection and imaging



Carrier Lifetime Imaging System for SiC Epitaxial Wafers

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